CRJF390N65GC Specs and Replacement
Type Designator: CRJF390N65GC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 32 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO220F
CRJF390N65GC substitution
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CRJF390N65GC datasheet
crjf390n65gc.pdf
CRJF390N65GC ( ) SJMOS N-MOSFET 650V, 0.39 , 11A Features Product Summary CRM(CQ) Super_Junction technology Much lower Ron*A performance for On-state efficiency VDS 650V RDS(on)_typ Much lower FOM for fast switching efficiency 0.39 ID 11A Applications LED/LCD/PDP TV and monitor Lighting 100% Avalanche Tested 100% Avalanche Tested ... See More ⇒
Detailed specifications: HM4110T, HM4240, HM4260, HM4264, HM4264B, HM4302, HM4302B, 2SK68A, STP65NF06, HCA60R150T, MDP10N027TH, NVHL055N60S5F, OSG60R074HZF, OSG60R074FZF, SRC60R078BTF, SRC60R078BT, SRC60R078BS2
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