HM4402E Datasheet and Replacement
Type Designator: HM4402E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 232 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: SOP8
HM4402E substitution
HM4402E Datasheet (PDF)
hm4402e.pdf

HM4402EDescription The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A RDS(ON)
hm4402c.pdf

HM4402CN-Channel Enhancement Mode Power MOSFET Description The HM4402C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON)
hm4402b.pdf

HM4402BN-Channel Enhancement Mode Power MOSFET Description The HM4402B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =21A Schematic diagram RDS(ON)
hm4402a.pdf

H Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID = A RDS(ON)
Datasheet: HYG042N10NS1P , HYG042N10NS1B , SUP75N06-08 , SUB75N06-08 , HM4354 , HM4402A , HM4402B , HM4402C , IRFP064N , HM4406A , HM4407 , HM4407A , HM4410A , HM4410B , HM4412 , HM4412A , HM4421B .
History: MTM45N05E | FDMS3600AS | IXFA12N50P | UTT4850L-S08-R | UTT30P06G-TN3-R | 2SK2606
Keywords - HM4402E MOSFET datasheet
HM4402E cross reference
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History: MTM45N05E | FDMS3600AS | IXFA12N50P | UTT4850L-S08-R | UTT30P06G-TN3-R | 2SK2606



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