All MOSFET. FDMC5614P Datasheet

 

FDMC5614P Datasheet and Replacement


   Type Designator: FDMC5614P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: POWER33
 

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FDMC5614P Datasheet (PDF)

 ..1. Size:506K  fairchild semi
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FDMC5614P

September 2010FDMC5614PtmP-Channel PowerTrench MOSFET -60V, -13.5A, 100mFeatures General Description Max rDS(on) = 100m at VGS = -10V, ID = -5.7AThis P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been Max rDS(on) = 135m at VGS = -4.5V, ID = -4.4Aoptimized for power management applications requiring a wi

 9.1. Size:307K  fairchild semi
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FDMC5614P

June 2010FDMC510PP-Channel PowerTrench MOSFET -20 V, -18 A, 8.0 mFeatures General Description Max rDS(on) = 8.0 m at VGS = -4.5 V, ID = -12 AThis P-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 9.8 m at VGS = -2.5 V, ID = -10 Abeen optimized for rDS(ON), switching performance and Max rDS(on) =

Datasheet: STS2620 , FDMC2674 , FDMC3020DC , STS2601 , FDMC3612 , STS2309A , FDMC4435BZ , FDMC510P , IRF2807 , FDMC6296 , STS2308A , FDMC6675BZ , FDMC6679AZ , FDMC6890NZ , FDMC7570S , FDMC7572S , FDMC7660 .

History: IXTH27N40MB | SML60H16

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