All MOSFET. HM4447 Datasheet

 

HM4447 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM4447
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 65 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 486 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SOP8

 HM4447 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM4447 Datasheet (PDF)

 ..1. Size:368K  cn hmsemi
 hm4447.pdf

HM4447 HM4447

HM4447Description The HM4447 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -25A RDS(ON)

 9.1. Size:664K  cn hmsemi
 hm4441a.pdf

HM4447 HM4447

HM4441AN Channel Enhancement Mode MOSFET SCRIPTION HM4441A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther bat

 9.2. Size:550K  cn hmsemi
 hm4441.pdf

HM4447 HM4447

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-5A RDS(ON)

 9.3. Size:753K  cn hmsemi
 hm4440a.pdf

HM4447 HM4447

HM4440AN-Channel Enhancement Mode Power MOSFET Description The HM4440A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS=60V,ID=5A Schematic diagram RDS(ON)

 9.4. Size:783K  cn hmsemi
 hm4444.pdf

HM4447 HM4447

HM4444N-Channel Enhancement Mode Power MOSFET Description The HM4444 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =12.5A RDS(ON)

 9.5. Size:527K  cn hmsemi
 hm4443.pdf

HM4447 HM4447

HM4443P-Channel Enhancement Mode Power MOSFET DDescription The HM4443 uses advanced trench technology to Gprovide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. SSchematic diagram General Features VDS = -40V,ID = -5.0A RDS(ON)

 9.6. Size:436K  cn hmsemi
 hm4440.pdf

HM4447 HM4447

HM4440N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4440 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =4.5A RDS(ON)

 9.7. Size:631K  cn hmsemi
 hm4449.pdf

HM4447 HM4447

HM4449P-Channel Enhancement Mode Power MOSFET DDescription The HM4449 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID = -7A RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top