HM4447 - Даташиты. Аналоги. Основные параметры

HM4447Description The HM4447 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -25A RDS(ON)

HM4441AN Channel Enhancement Mode MOSFET SCRIPTION HM4441A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther bat

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-5A RDS(ON)

HM4440AN-Channel Enhancement Mode Power MOSFET Description The HM4440A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS=60V,ID=5A Schematic diagram RDS(ON)

HM4444N-Channel Enhancement Mode Power MOSFET Description The HM4444 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =12.5A RDS(ON)

HM4443P-Channel Enhancement Mode Power MOSFET DDescription The HM4443 uses advanced trench technology to Gprovide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. SSchematic diagram General Features VDS = -40V,ID = -5.0A RDS(ON)

HM4440N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4440 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =4.5A RDS(ON)

HM4449P-Channel Enhancement Mode Power MOSFET DDescription The HM4449 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -30V,ID = -7A RDS(ON)