All MOSFET. HM45N06D Datasheet

 

HM45N06D Datasheet and Replacement


   Type Designator: HM45N06D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: DFN5X6-8L
 

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HM45N06D Datasheet (PDF)

 ..1. Size:669K  cn hmsemi
 hm45n06d.pdf pdf_icon

HM45N06D

HM45N06D N-Channel Enhancement Mode Power MOSFET Description The HM45N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =35A RDS(ON)

 8.1. Size:972K  cn hmsemi
 hm45n02q.pdf pdf_icon

HM45N06D

HM45N02QDescription The HM45N02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =45A RDS(ON)

 8.2. Size:1168K  cn hmsemi
 hm45n02d.pdf pdf_icon

HM45N06D

HM45N02DDescription The HM45N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =45A RDS(ON)

Datasheet: HM4487 , HM4487A , HM4487B , HM4488 , HM4490 , HM4503 , HM45N02D , HM45N02Q , IRF530 , HM45P02D , HM45P02Q , HM45P03K , HM4606 , HM4606A , HM4606B , HM4606C , HM4606D .

History: 2SK3774-01L | 2SK3994 | 2SK3947 | TK3P80E | IXTP12N65X2 | GSM3411 | CS16N65F

Keywords - HM45N06D MOSFET datasheet

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