HM4611B Specs and Replacement
Type Designator: HM4611B
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ -
Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOP8
- MOSFET ⓘ Cross-Reference Search
HM4611B datasheet
..1. Size:709K cn hmsemi
hm4611b.pdf 
HM4611B N and P-Channel Enhancement Mode Power MOSFET Description The HM4611B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS = 60V,ID =6.3A RDS(ON) ... See More ⇒
8.1. Size:949K cn hmsemi
hm4611.pdf
N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . General Features N-Channel N-channel P-channel VDS = V,ID = Schematic diagram RDS(ON) ... See More ⇒
8.2. Size:1105K cn hmsemi
hm4611a.pdf
HM4611A N and P-Channel Enhancement Mode Power MOSFET Description The HM4611A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . It can be used in a wide variety of applications. General Features N-Channel N-channel P-channel VDS = 60V,ID =9.0A Schematic diagram RDS(ON) ... See More ⇒
9.1. Size:830K cn hmsemi
hm4618b.pdf
HM4618B N and P-Channel Enhancement Mode Power MOSFET Description The HM4618B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =40V,ID =8A Schematic diagram RDS(ON) ... See More ⇒
9.2. Size:753K cn hmsemi
hm4612d.pdf
HM4612D N and P-Channel Enhancement Mode Power MOSFET Description The HM4612D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel N-channel P-channel VDS =12V,ID =5A RDS(ON) ... See More ⇒
9.3. Size:715K cn hmsemi
hm4612.pdf
HM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N P MOS N-CH VDS= 60V P-CH VDS= - 60V RDS(ON), Vgs@10V, Ids@4.5A = 48m RDS(ON), Vgs@-10V, Ids@-3.2A = 110m RDS(ON), Vgs@4.5V, Ids@3A = 60m RDS(ON), Vgs@-4.5V, Ids@-2.8A = 140m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistan... See More ⇒
9.5. Size:1361K cn hmsemi
hm4614b.pdf
HM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N P MOS N-CH VDS= 40V P-CH VDS= - 40V RDS(ON), Vgs@10V, Ids@6.0A = 31m RDS(ON), Vgs@-10V, Ids@-5.0A = 45m RDS(ON), Vgs@4.5V, Ids@5.0A= 45m RDS(ON), Vgs@-4.5V, Ids@-4.0A = 63m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resist... See More ⇒
9.6. Size:980K cn hmsemi
hm4618.pdf
HM4618 N and P-Channel Enhancement Mode Power MOSFET Description The HM4618 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel Schematic diagram VDS = 40V,ID =10A RDS(ON) ... See More ⇒
9.7. Size:659K cn hmsemi
hm4618sp.pdf
HM4618SP Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The HM4618SP uses advanced trench technology to provide VSSS =20V,IS =6A excellent RSS(ON), low gate charge and operation with gate 2.5V drive voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It Common-drain type is ESD protected. This device is... See More ⇒
9.8. Size:874K cn hmsemi
hm4616a.pdf
N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel P-channel General Features N-Channel... See More ⇒
9.9. Size:922K cn hmsemi
hm4615.pdf
HM4615 N and P-Channel Enhancement Mode Power MOSFET Description The HM4615 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel P-channel General Features N-Channel Sc... See More ⇒
9.10. Size:579K cn hmsemi
hm4616.pdf
N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-channel P-channel General Features N-Channel ... See More ⇒
Detailed specifications: HM45P03K, HM4606, HM4606A, HM4606B, HM4606C, HM4606D, HM4611, HM4611A, BS170, HM4612, HM4612D, HM4614, HM4614B, HM4615, HM4616, HM4616A, HM4618
Keywords - HM4611B MOSFET specs
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