HM4812 Datasheet and Replacement
Type Designator: HM4812
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
Package: SOP8
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HM4812 Datasheet (PDF)
hm4812.pdf

HM4812Dual N-Channel Enhancement Mode Power MOSFET Description The HM4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. Schematic diagram Genera Features VDS = 30V,ID = 7A RDS(ON)
hm4813.pdf

HM4813Dual P-Channel Enhancement Mode Power MOSFET Description D1D2The HM4813 uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S1 S2Schematic diagram General Features VDS = -30V,ID = -7A RDS(ON)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CHM85A3PAGP | SFFX054Z | TK7P65W
Keywords - HM4812 MOSFET datasheet
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History: CHM85A3PAGP | SFFX054Z | TK7P65W



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