HM4853A Datasheet and Replacement
Type Designator: HM4853A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 17 nC
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 498 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: SOP8
HM4853A substitution
HM4853A Datasheet (PDF)
hm4853a.pdf

HM4853AP-Channel Enhancement Mode Power MOSFET D1D2Description G1 G2The HM4853A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -20A RS(ON)
hm4853.pdf

P-Channel Enhancement Mode Power MOSFET D1D2Description G1 G2The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -9A RDS(ON)
hm4853b.pdf

HM4853BP-Channel Enhancement Mode Power MOSFET D1D2Description G1 G2The HM4853B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate S1 S2voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -12V,ID = -8A RDS(ON)
Datasheet: HM4826 , HM4826A , HM4828 , HM4828A , HM4830 , HM4840 , HM4843 , HM4853 , MMD60R360PRH , HM4853B , HM4884 , HM4884A , HM4885 , HM4885A , HM4886A , HM4886E , HM4887 .
History: 4N60KG-TND-R
Keywords - HM4853A MOSFET datasheet
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History: 4N60KG-TND-R



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