2SK2529 Datasheet and Replacement
Type Designator: 2SK2529
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 230 nS
Cossⓘ - Output Capacitance: 1760 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO220F
2SK2529 substitution
2SK2529 Datasheet (PDF)
2sk2529.pdf

2SK2529 Silicon N Channel MOS FET REJ03G1014-0800 (Previous: ADE-208-356F) Rev.8.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A(Package name: TO-220CFM)DG 1. Gate2. Drai
2sk2520-01mr.pdf

N-channel MOS-FET2SK2520-01MRFAP-II Series 200V 0,4 10A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equi
2sk2522-01mr.pdf

N-channel MOS-FET2SK2522-01MRFAP-II Series 200V 0,18 18A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ
Datasheet: 2SK2515 , 2SK2519-01 , 2SK2520-01MR , 2SK2521-01 , 2SK2522-01MR , 2SK2523-01 , 2SK2524-01MR , 2SK2525-01 , IRF640 , 2SK2541 , 2SK2553 , 2SK2554 , 2SK2586 , 2SK2684 , 2SK2701 , 2SK2702 , 2SK2703 .
History: IRFSL3107PBF | AON6206
Keywords - 2SK2529 MOSFET datasheet
2SK2529 cross reference
2SK2529 equivalent finder
2SK2529 lookup
2SK2529 substitution
2SK2529 replacement
History: IRFSL3107PBF | AON6206



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