STS2306E PDF and Equivalents Search

 

STS2306E Specs and Replacement


   Type Designator: STS2306E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A

Electrical Characteristics


   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOT23
 

 STS2306E substitution

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STS2306E datasheet

 ..1. Size:136K  samhop
sts2306e.pdf pdf_icon

STS2306E

Green Product S TS 2306E S amHop Microelectronics C orp. J an. 10 2008 Ver1.0 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 30 @ VG S = 4.5V 20V 6.5A S urface Mount Package. 40 @ VG S = 2.5V E S D Protected. D S OT-23 G S ABS OLUTE MAX... See More ⇒

 7.1. Size:139K  samhop
sts2306a.pdf pdf_icon

STS2306E

Green Product S TS 2306A S amHop Microelectronics C orp. Apr. 27 2010 Ver1.1 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 40 @ VG S = 4.5V 20V 4.5A S urface Mount Package. 50 @ VG S = 2.5V E S D Protected. D SOT-23-3L G S ABS OLUTE MA... See More ⇒

 7.2. Size:134K  samhop
sts2306.pdf pdf_icon

STS2306E

Green Product S TS 2306 S amHop Microelectronics C orp. Apr,21 2005 ver1.2 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 45 @ VG S = 4.5V 20V 2.8A S OT-23 package. 60 @ VG S =2.5V D S OT-23 G S ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless o... See More ⇒

 7.3. Size:879K  cn vbsemi
sts2306.pdf pdf_icon

STS2306E

STS2306 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC C... See More ⇒

Detailed specifications: STS2308A , FDMC6675BZ , FDMC6679AZ , FDMC6890NZ , FDMC7570S , FDMC7572S , FDMC7660 , STS2307 , 7N60 , FDMC7660DC , FDMC7660S , STS2306A , FDMC7664 , STS2306 , FDMC7672 , STS2305A , FDMC7672S .

History: 5N65G-TA3-T | NTNS5K0P021Z | JMSL1006AGQ | IXTY1R4N100P | FDH3632 | PMZ1200UPE

Keywords - STS2306E MOSFET specs

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