STS2306E - описание и поиск аналогов

Green Product S TS 2306E S amHop Microelectronics C orp. J an. 10 2008 Ver1.0 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 30 @ VG S = 4.5V 20V 6.5A S urface Mount Package. 40 @ VG S = 2.5V E S D Protected. D S OT-23 G S ABS OLUTE MAX

Green Product S TS 2306A S amHop Microelectronics C orp. Apr. 27 2010 Ver1.1 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 40 @ VG S = 4.5V 20V 4.5A S urface Mount Package. 50 @ VG S = 2.5V E S D Protected. D SOT-23-3L G S ABS OLUTE MA

Green Product S TS 2306 S amHop Microelectronics C orp. Apr,21 2005 ver1.2 N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 45 @ VG S = 4.5V 20V 2.8A S OT-23 package. 60 @ VG S =2.5V D S OT-23 G S ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless o

STS2306 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC C