All MOSFET. HM4N70F Datasheet

 

HM4N70F Datasheet and Replacement


   Type Designator: HM4N70F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15 nC
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO220F
 

 HM4N70F substitution

   - MOSFET ⓘ Cross-Reference Search

 

HM4N70F Datasheet (PDF)

 ..1. Size:785K  cn hmsemi
 hm4n70f.pdf pdf_icon

HM4N70F

General Description VDSS 700 V HM4N70F the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and

Datasheet: HM4N60F , HM4N60I , HM4N60K , HM4N65 , HM4N65F , HM4N65I , HM4N65K , HM4N65R , IRFP250N , HM4N90I , HM5001 , HM50N03 , HM50N03I , HM50N03K , HM50N06 , HM50N06A , HM50N06D .

History: IRFD010 | SVF4N65RD | AP2422GY | SI4336DY | PJS6833 | 2SK3352

Keywords - HM4N70F MOSFET datasheet

 HM4N70F cross reference
 HM4N70F equivalent finder
 HM4N70F lookup
 HM4N70F substitution
 HM4N70F replacement

 

 
Back to Top

 


 
.