HM4N70F PDF and Equivalents Search

 

HM4N70F Specs and Replacement

Type Designator: HM4N70F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO220F

HM4N70F substitution

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HM4N70F datasheet

 ..1. Size:785K  cn hmsemi
 hm4n70f.pdf pdf_icon

HM4N70F

General Description VDSS 700 V HM4N70F the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and... See More ⇒

Detailed specifications: HM4N60F, HM4N60I, HM4N60K, HM4N65, HM4N65F, HM4N65I, HM4N65K, HM4N65R, IRFB4115, HM4N90I, HM5001, HM50N03, HM50N03I, HM50N03K, HM50N06, HM50N06A, HM50N06D

Keywords - HM4N70F MOSFET specs

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