All MOSFET. HM5001 Datasheet

 

HM5001 Datasheet and Replacement


   Type Designator: HM5001
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 0.03 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 1.14 nC
   tr ⓘ - Rise Time: 55.8 nS
   Cossⓘ - Output Capacitance: 4.53 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 700 Ohm
   Package: SOT23
 

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HM5001 Datasheet (PDF)

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HM5001

HM5001 Silicon N-Channel Power MOSFET (Depletion Mode) Features VDSX 600 V N-Channel IDSS,min 0.012 A RDS(ON),max 700 ESD improved Capability Depletion Mode dv/dt rated Pb-free lead plating;ROHS compliant Halogen Free AbsoluteTc= 25 unless otherwise specified Symbol Parameter Rating Units VDSX Drain-to-Source Voltage 600 V Continu

Datasheet: HM4N60K , HM4N65 , HM4N65F , HM4N65I , HM4N65K , HM4N65R , HM4N70F , HM4N90I , IRFB4115 , HM50N03 , HM50N03I , HM50N03K , HM50N06 , HM50N06A , HM50N06D , HM50N06I , HM50N06K .

History: STW36NM60N | AP25N10GJ-HF | 2SK3355-S

Keywords - HM5001 MOSFET datasheet

 HM5001 cross reference
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