HM5001 PDF and Equivalents Search

 

HM5001 Specs and Replacement

Type Designator: HM5001

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55.8 nS

Cossⓘ - Output Capacitance: 4.53 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 700 Ohm

Package: SOT23

HM5001 substitution

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HM5001 datasheet

 ..1. Size:627K  cn hmsemi
 hm5001.pdf pdf_icon

HM5001

HM5001 Silicon N-Channel Power MOSFET (Depletion Mode) Features VDSX 600 V N-Channel IDSS,min 0.012 A RDS(ON),max 700 ESD improved Capability Depletion Mode dv/dt rated Pb-free lead plating;ROHS compliant Halogen Free Absolute Tc= 25 unless otherwise specified Symbol Parameter Rating Units VDSX Drain-to-Source Voltage 600 V Continu... See More ⇒

Detailed specifications: HM4N60K, HM4N65, HM4N65F, HM4N65I, HM4N65K, HM4N65R, HM4N70F, HM4N90I, P55NF06, HM50N03, HM50N03I, HM50N03K, HM50N06, HM50N06A, HM50N06D, HM50N06I, HM50N06K

Keywords - HM5001 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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