All MOSFET. HM5001 Datasheet

 

HM5001 Datasheet and Replacement


   Type Designator: HM5001
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.03 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 55.8 nS
   Cossⓘ - Output Capacitance: 4.53 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 700 Ohm
   Package: SOT23
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HM5001 Datasheet (PDF)

 ..1. Size:627K  cn hmsemi
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HM5001

HM5001 Silicon N-Channel Power MOSFET (Depletion Mode) Features VDSX 600 V N-Channel IDSS,min 0.012 A RDS(ON),max 700 ESD improved Capability Depletion Mode dv/dt rated Pb-free lead plating;ROHS compliant Halogen Free AbsoluteTc= 25 unless otherwise specified Symbol Parameter Rating Units VDSX Drain-to-Source Voltage 600 V Continu

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMM11N80M3 | AM2314NE | FDMS9620S | IRFI7536G | RFP2N10L

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