All MOSFET. HM5N06PR Datasheet

 

HM5N06PR Datasheet and Replacement


   Type Designator: HM5N06PR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.3 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT89
 

 HM5N06PR substitution

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HM5N06PR Datasheet (PDF)

 ..1. Size:669K  cn hmsemi
 hm5n06pr.pdf pdf_icon

HM5N06PR

HM5N06PRNCE N-Channel Enhancement Mode Power MOSFET Description DThe HM5N06PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features VDS =60V,ID =5A SRDS(ON)

 8.1. Size:492K  cn hmsemi
 hm5n06ar.pdf pdf_icon

HM5N06PR

HM5N06 N-Channel Enhancement Mode Power MOSFET Description DThe HM5N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features VDS =60V,ID =5A SRDS(ON)

 8.2. Size:355K  cn hmsemi
 hm5n06r.pdf pdf_icon

HM5N06PR

HM5N06RNCE N-Channel Enhancement Mode Power MOSFET Description DThe HM5N06R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features VDS =60V,ID =5A SRDS(ON)

Datasheet: HM50P03D , HM50P03K , HM50P06 , HM50P06K , HM530 , HM55N03D , HM5853 , HM5N06AR , AO4407 , HM5N06R , HM5N20I , HM5N20R , HM5N30K , HM5N30PR , HM5N30R , HM5N50I , HM5N50K .

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