HM5N06PR Specs and Replacement

Type Designator: HM5N06PR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.3 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOT89

HM5N06PR substitution

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HM5N06PR datasheet

 ..1. Size:669K  cn hmsemi
 hm5n06pr.pdf pdf_icon

HM5N06PR

HM5N06PR NCE N-Channel Enhancement Mode Power MOSFET Description D The HM5N06PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. General Features VDS =60V,ID =5A S RDS(ON) ... See More ⇒

 8.1. Size:492K  cn hmsemi
 hm5n06ar.pdf pdf_icon

HM5N06PR

HM5N06 N-Channel Enhancement Mode Power MOSFET Description D The HM5N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. General Features VDS =60V,ID =5A S RDS(ON) ... See More ⇒

 8.2. Size:355K  cn hmsemi
 hm5n06r.pdf pdf_icon

HM5N06PR

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Detailed specifications: HM50P03D, HM50P03K, HM50P06, HM50P06K, HM530, HM55N03D, HM5853, HM5N06AR, IRF530, HM5N06R, HM5N20I, HM5N20R, HM5N30K, HM5N30PR, HM5N30R, HM5N50I, HM5N50K

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