All MOSFET. HM5N20I Datasheet

 

HM5N20I Datasheet and Replacement


   Type Designator: HM5N20I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO251
 

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HM5N20I Datasheet (PDF)

 ..1. Size:440K  cn hmsemi
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HM5N20I

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 200V,ID =5A Schematic diagram RDS(ON)

 8.1. Size:1153K  cn hmsemi
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HM5N20I

HM N-Channel Enhancement Mode Power MOSFET Description DThe HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 200V,ID = A Schematic diagram RDS(ON)

Datasheet: HM50P06 , HM50P06K , HM530 , HM55N03D , HM5853 , HM5N06AR , HM5N06PR , HM5N06R , IRFP450 , HM5N20R , HM5N30K , HM5N30PR , HM5N30R , HM5N50I , HM5N50K , HM5N60 , HM5N60F .

History: HY4008B | ME7632 | IXFH40N85X | IRF7493PBF-1 | TK12X60U | 2N3921 | AP86T02GJ

Keywords - HM5N20I MOSFET datasheet

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