HM5N50I MOSFET. Datasheet pdf. Equivalent
Type Designator: HM5N50I
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: TO251
HM5N50I Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM5N50I Datasheet (PDF)
hm5n50k hm5n50i.pdf
HM5N50K/HM5N50IHM5N50K/HM5N50I500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.5A, 500V, RDS(on) = 2.0 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 16nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: HFU5N50U
