All MOSFET. HM5N50I Datasheet

 

HM5N50I Datasheet and Replacement


   Type Designator: HM5N50I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO251
 

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HM5N50I Datasheet (PDF)

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HM5N50I

HM5N50K/HM5N50IHM5N50K/HM5N50I500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.5A, 500V, RDS(on) = 2.0 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 16nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching

Datasheet: HM5N06AR , HM5N06PR , HM5N06R , HM5N20I , HM5N20R , HM5N30K , HM5N30PR , HM5N30R , IRFP450 , HM5N50K , HM5N60 , HM5N60F , HM5N60I , HM5N60K , HM5N65 , HM5N65F , HM5N65I .

History: IRF7422D2 | IRF6898M | SIHF22N60S | IXFG55N50 | IRF9620S | BLF6G10-160RN | CS15N50A8R

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