All MOSFET. HM609K Datasheet

 

HM609K Datasheet and Replacement


   Type Designator: HM609K
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO252-4
 

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HM609K Datasheet (PDF)

 ..1. Size:1004K  cn hmsemi
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HM609K

HM609KDual N+P Enhancement MOSFETFeatures Package DimensionsTO-252-4Low On resistance.4.5V drive.RoHS compliant.SpecificationsAbsolute Maximum Ratings at T =250CaParameter Symbol Conditions N-Ch P-Ch UnitDrain-to-Source Voltage V 40 -40 VDSSGate-to-Source Voltage V +20 +20 VGSSDrain Current (DC) I 20 -15 ADDrain Current (Pulse) I PW10uS, duty cycle1

 9.1. Size:2079K  cn hmsemi
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HM609K

HM609BKDESCRIPTION The HM609BK is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as power management, where high-side switching,

Datasheet: HM5N90 , HM5P55R , HM6005A , HM603AK , HM603BK , HM603K , HM607K , HM609BK , K2611 , HM60N02 , HM60N02K , HM60N03 , HM60N03D , HM60N03K , HM60N04 , HM60N04K , HM60N05 .

History: NVMFS5834NL | IXTT140N10P | SSF2341E | STD35NF3LLT4 | SSM3J314T | ELM36403EA | S60N15RP

Keywords - HM609K MOSFET datasheet

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