HM60N02 MOSFET: N-Ch, 20V, 60A. Full specification with pinout and replacement list

..1. Size:575K cn hmsemi
hm60n02.pdf pdf_icon

HM60N02 Description The HM60N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON) ... See More ⇒

0.1. Size:492K cn hmsemi
hm60n02k.pdf pdf_icon

HM60N02K Description The HM60N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON) ... See More ⇒

8.1. Size:892K cn hmsemi
hm60n08.pdf pdf_icon

HM60N08 N-Channel Enhancement Mode Power MOSFET Description The HM60N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =60A RDS(ON) ... See More ⇒

8.2. Size:622K cn hmsemi
hm60n06k.pdf pdf_icon

HM60N06K Description The HM60N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON) ... See More ⇒

8.3. Size:634K cn hmsemi
hm60n04.pdf pdf_icon

HM60N04 N-Channel Enhancement Mode Power MOSFET Description The HM60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON) ... See More ⇒

8.4. Size:1263K cn hmsemi
hm60n05k.pdf pdf_icon

HM60N05K N-Channel Enhancement Mode Power MOSFET Description The HM60N05K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON) ... See More ⇒

8.5. Size:1063K cn hmsemi
hm60n05.pdf pdf_icon

HM60N05 N-Channel Enhancement Mode Power MOSFET Description The HM60N05 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON) ... See More ⇒

8.6. Size:504K cn hmsemi
hm60n06.pdf pdf_icon

HM60N06 Description The HM60N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON) ... See More ⇒

8.7. Size:564K cn hmsemi
hm60n03d.pdf pdf_icon

HM60N03D N-Channel Enhancement Mode Power MOSFET Description The HM60N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON) ... See More ⇒

8.8. Size:677K cn hmsemi
hm60n03.pdf pdf_icon

HM60N03 N-Channel Enhancement Mode Power MOSFET Description The HM60N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON) ... See More ⇒

8.9. Size:646K cn hmsemi
hm60n04k.pdf pdf_icon

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON) ... See More ⇒

8.10. Size:729K cn hmsemi
hm60n03k.pdf pdf_icon

HM60N03K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM60N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =60A RDS(ON) ... See More ⇒

HM60N02 Specs

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