HM60N03D Datasheet. Specs and Replacement
Type Designator: HM60N03D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 407 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: DFN5X6-8L
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HM60N03D datasheet
hm60n03d.pdf
HM60N03D N-Channel Enhancement Mode Power MOSFET Description The HM60N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON) ... See More ⇒
hm60n03.pdf
HM60N03 N-Channel Enhancement Mode Power MOSFET Description The HM60N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON) ... See More ⇒
hm60n03k.pdf
HM60N03K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM60N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =60A RDS(ON) ... See More ⇒
hm60n08.pdf
HM60N08 N-Channel Enhancement Mode Power MOSFET Description The HM60N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =60A RDS(ON) ... See More ⇒
Detailed specifications: HM603BK, HM603K, HM607K, HM609BK, HM609K, HM60N02, HM60N02K, HM60N03, IRFZ46N, HM60N03K, HM60N04, HM60N04K, HM60N05, HM60N05K, HM60N06, HM60N06K, HM60N08
Keywords - HM60N03D MOSFET specs
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MOSFET Parameters. How They Affect Each Other
History: SD202DC | NCE3401BY | APT901RBN | CI47N65 | FDB86135 | FK7SM-12 | NTGD3148NT1G
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