HM60N04 Datasheet. Specs and Replacement

Type Designator: HM60N04  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.2 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO220

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HM60N04 datasheet

 ..1. Size:634K  cn hmsemi
 hm60n04.pdf pdf_icon

HM60N04

HM60N04 N-Channel Enhancement Mode Power MOSFET Description The HM60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON) ... See More ⇒

 0.1. Size:646K  cn hmsemi
 hm60n04k.pdf pdf_icon

HM60N04

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON) ... See More ⇒

 8.1. Size:892K  cn hmsemi
 hm60n08.pdf pdf_icon

HM60N04

HM60N08 N-Channel Enhancement Mode Power MOSFET Description The HM60N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =60A RDS(ON) ... See More ⇒

 8.2. Size:622K  cn hmsemi
 hm60n06k.pdf pdf_icon

HM60N04

HM60N06K Description The HM60N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON) ... See More ⇒

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Detailed specifications: HM607K, HM609BK, HM609K, HM60N02, HM60N02K, HM60N03, HM60N03D, HM60N03K, IRL3713, HM60N04K, HM60N05, HM60N05K, HM60N06, HM60N06K, HM60N08, HM60N10D, HM60N20

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