All MOSFET. HM60N06 Datasheet

 

HM60N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM60N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO220

 HM60N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM60N06 Datasheet (PDF)

 ..1. Size:504K  cn hmsemi
 hm60n06.pdf

HM60N06 HM60N06

HM60N06Description The HM60N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON)

 0.1. Size:622K  cn hmsemi
 hm60n06k.pdf

HM60N06 HM60N06

HM60N06KDescription The HM60N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON)

 8.1. Size:892K  cn hmsemi
 hm60n08.pdf

HM60N06 HM60N06

HM60N08N-Channel Enhancement Mode Power MOSFET Description The HM60N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =60A RDS(ON)

 8.2. Size:575K  cn hmsemi
 hm60n02.pdf

HM60N06 HM60N06

HM60N02Description The HM60N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON)

 8.3. Size:634K  cn hmsemi
 hm60n04.pdf

HM60N06 HM60N06

HM60N04N-Channel Enhancement Mode Power MOSFET Description The HM60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)

 8.4. Size:1263K  cn hmsemi
 hm60n05k.pdf

HM60N06 HM60N06

HM60N05KN-Channel Enhancement Mode Power MOSFET Description The HM60N05K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON)

 8.5. Size:1063K  cn hmsemi
 hm60n05.pdf

HM60N06 HM60N06

HM60N05N-Channel Enhancement Mode Power MOSFET Description The HM60N05 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON)

 8.6. Size:564K  cn hmsemi
 hm60n03d.pdf

HM60N06 HM60N06

HM60N03DN-Channel Enhancement Mode Power MOSFET Description The HM60N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON)

 8.7. Size:677K  cn hmsemi
 hm60n03.pdf

HM60N06 HM60N06

HM60N03N-Channel Enhancement Mode Power MOSFET Description The HM60N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON)

 8.8. Size:646K  cn hmsemi
 hm60n04k.pdf

HM60N06 HM60N06

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)

 8.9. Size:729K  cn hmsemi
 hm60n03k.pdf

HM60N06 HM60N06

HM60N03K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM60N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =60A RDS(ON)

 8.10. Size:492K  cn hmsemi
 hm60n02k.pdf

HM60N06 HM60N06

HM60N02KDescription The HM60N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: MTA090N02KC3

 

 
Back to Top