HM60N06K Datasheet. Specs and Replacement

Type Designator: HM60N06K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO252

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HM60N06K datasheet

 ..1. Size:622K  cn hmsemi
 hm60n06k.pdf pdf_icon

HM60N06K

HM60N06K Description The HM60N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON) ... See More ⇒

 7.1. Size:504K  cn hmsemi
 hm60n06.pdf pdf_icon

HM60N06K

HM60N06 Description The HM60N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON) ... See More ⇒

 8.1. Size:892K  cn hmsemi
 hm60n08.pdf pdf_icon

HM60N06K

HM60N08 N-Channel Enhancement Mode Power MOSFET Description The HM60N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =60A RDS(ON) ... See More ⇒

 8.2. Size:575K  cn hmsemi
 hm60n02.pdf pdf_icon

HM60N06K

HM60N02 Description The HM60N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON) ... See More ⇒

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Detailed specifications: HM60N03, HM60N03D, HM60N03K, HM60N04, HM60N04K, HM60N05, HM60N05K, HM60N06, IRFB31N20D, HM60N08, HM60N10D, HM60N20, HM60N20D, HM60N75K, HM610AK, HM640, HM6400

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