HM60N20D Datasheet and Replacement
Type Designator: HM60N20D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 285
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 60
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 950
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032
Ohm
Package:
TO263
- MOSFET Cross-Reference Search
HM60N20D Datasheet (PDF)
..1. Size:740K cn hmsemi
hm60n20d.pdf 
HM60N20DN-Channel Enhancement Mode Power MOSFET Description The HM60N20D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)
7.1. Size:561K cn hmsemi
hm60n20.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =60A RDS(ON)
9.1. Size:892K cn hmsemi
hm60n08.pdf
HM60N08N-Channel Enhancement Mode Power MOSFET Description The HM60N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =60A RDS(ON)
9.2. Size:622K cn hmsemi
hm60n06k.pdf
HM60N06KDescription The HM60N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON)
9.3. Size:575K cn hmsemi
hm60n02.pdf
HM60N02Description The HM60N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON)
9.4. Size:634K cn hmsemi
hm60n04.pdf
HM60N04N-Channel Enhancement Mode Power MOSFET Description The HM60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)
9.5. Size:1263K cn hmsemi
hm60n05k.pdf
HM60N05KN-Channel Enhancement Mode Power MOSFET Description The HM60N05K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON)
9.6. Size:563K cn hmsemi
hm60n10d.pdf
HM60N10DDescription The HM60N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS = 100V,ID =60A RDS(ON)
9.7. Size:598K cn hmsemi
hm60n75k.pdf
HM60N75K Product Summary General Description The HM60N75K uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate RDS(ON) typ. 6.8 m charge. It can be used in a wide variety of applications. max. 8.5 m ID 60 A Features VDS=75VID=60A@ VGS=10V 100% UIS TESTED! RDS(ON)
9.8. Size:1063K cn hmsemi
hm60n05.pdf
HM60N05N-Channel Enhancement Mode Power MOSFET Description The HM60N05 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 50V,ID =60A RDS(ON)
9.9. Size:504K cn hmsemi
hm60n06.pdf
HM60N06Description The HM60N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =60A RDS(ON)
9.10. Size:564K cn hmsemi
hm60n03d.pdf
HM60N03DN-Channel Enhancement Mode Power MOSFET Description The HM60N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON)
9.11. Size:677K cn hmsemi
hm60n03.pdf
HM60N03N-Channel Enhancement Mode Power MOSFET Description The HM60N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =60A RDS(ON)
9.12. Size:646K cn hmsemi
hm60n04k.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =60A RDS(ON)
9.13. Size:729K cn hmsemi
hm60n03k.pdf
HM60N03K N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM60N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =60A RDS(ON)
9.14. Size:492K cn hmsemi
hm60n02k.pdf
HM60N02KDescription The HM60N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =60A RDS(ON)
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History: 2SK3192
| FQD4N25TM
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