HM6408 Datasheet. Specs and Replacement

Type Designator: HM6408  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: SOT23-6L

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HM6408 datasheet

 ..1. Size:1121K  cn hmsemi
 hm6408.pdf pdf_icon

HM6408

HM6408 N-Channel Enhancement Mode Power MOSFET Description D The HM6408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 5.5A RDS(ON) ... See More ⇒

 9.1. Size:45K  chenmko
 chm640ngp.pdf pdf_icon

HM6408

CHENMKO ENTERPRISE CO.,LTD CHM640NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 200 Volts CURRENT 18 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. (D2PAK) 0.420(10.67) 0.190(4.83) * Super high dense cell design for extremely low RDS(ON). 0.380(9.69) 0.160(4.0... See More ⇒

 9.2. Size:1006K  cn hmsemi
 hm6409.pdf pdf_icon

HM6408

HM6409 P-Channel Enhancement Mode Power MOSFET Description D The HM6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -20V,ID = -5.0A RDS(ON) ... See More ⇒

 9.3. Size:734K  cn hmsemi
 hm6400.pdf pdf_icon

HM6408

HM6400 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6400 uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES VDS = 30V,ID = 6.9A Schematic diagram RDS(ON) ... See More ⇒

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Detailed specifications: HM60N10D, HM60N20, HM60N20D, HM60N75K, HM610AK, HM640, HM6400, HM6401, IRF9640, HM6409, HM6602, HM6604, HM6620, HM6800, HM6801, HM6803, HM6804

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.