All MOSFET. HM6803 Datasheet

 

HM6803 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM6803
   Marking Code: 6803
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOT23-6L

 HM6803 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM6803 Datasheet (PDF)

 ..1. Size:744K  cn hmsemi
 hm6803.pdf

HM6803 HM6803

HM6803 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION DDThe HM6803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate GGvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SS GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

 9.1. Size:307K  cn hmsemi
 hm6804d.pdf

HM6803 HM6803

HM6804DDual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6804D uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G GBattery protection or in other Switching application. S SGENERAL FEATURES Schematic diagram VDS = 20V,ID = 0.9A R

 9.2. Size:612K  cn hmsemi
 hm6804.pdf

HM6803 HM6803

HM680 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM680 uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G GBattery protection or in other Switching application. S SGENERAL FEATURES Schematic diagram VDS = 20V,ID = A RDS

 9.3. Size:771K  cn hmsemi
 hm6801.pdf

HM6803 HM6803

HM6801 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION DDThe HM6801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate GGvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SS GENERAL FEATURES Schematic diagram VDS = -30V,ID = -2.5A RDS(ON)

 9.4. Size:559K  cn hmsemi
 hm6800.pdf

HM6803 HM6803

HM6800Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM6800 uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G GBattery protection or in other Switching application. S SGENERAL FEATURES Schematic diagram VDS = 30V,ID = A RDS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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