HM6N70 Datasheet. Specs and Replacement

Type Designator: HM6N70  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 69 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO220

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HM6N70 datasheet

 ..1. Size:1027K  cn hmsemi
hm6n70 hm6n70f.pdf pdf_icon

HM6N70

HM6N70/F General Description VDSS 700 V HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25 ) 85 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.8 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a... See More ⇒

 0.1. Size:994K  cn hmsemi
hm6n70i.pdf pdf_icon

HM6N70

HM6N70I General Description VDSS 700 V ,the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25 ) 85 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.8 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturiz... See More ⇒

 0.2. Size:1192K  cn hmsemi
hm6n70k.pdf pdf_icon

HM6N70

HM6N70K General Description VDSS 700 V HM6N70K, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25 ) 85 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.8 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an... See More ⇒

Detailed specifications: HM6800, HM6801, HM6803, HM6804, HM6804D, HM6N10, HM6N10PR, HM6N10R, IRFB4110, HM6N70F, HM6N70I, HM6N70K, HM6N80K, HM6N90, HM7000, HM7002, HM7002B

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