HM6N70 Datasheet and Replacement. Cross Reference Search

HM6N70 Datasheet (PDF)

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HM6N70/F General Description VDSS 700 V HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 85 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.8 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a

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HM6N70I General Description VDSS 700 V ,the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 85 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.8 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturiz

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HM6N70K General Description VDSS 700 V HM6N70K, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 85 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.8 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an

Datasheet: HM6800 , HM6801 , HM6803 , HM6804 , HM6804D , HM6N10 , HM6N10PR , HM6N10R , IRFZ44 , HM6N70F , HM6N70I , HM6N70K , HM6N80K , HM6N90 , HM7000 , HM7002 , HM7002B .