HM6N70F Datasheet. Specs and Replacement
Type Designator: HM6N70F 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 69 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO220F
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HM6N70F substitution
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HM6N70F datasheet
hm6n70 hm6n70f.pdf
HM6N70/F General Description VDSS 700 V HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25 ) 85 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.8 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a... See More ⇒
hm6n70i.pdf
HM6N70I General Description VDSS 700 V ,the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25 ) 85 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.8 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturiz... See More ⇒
hm6n70k.pdf
HM6N70K General Description VDSS 700 V HM6N70K, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25 ) 85 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.8 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an... See More ⇒
Detailed specifications: HM6801, HM6803, HM6804, HM6804D, HM6N10, HM6N10PR, HM6N10R, HM6N70, IRFP460, HM6N70I, HM6N70K, HM6N80K, HM6N90, HM7000, HM7002, HM7002B, HM7002DM
Keywords - HM6N70F MOSFET specs
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