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HM70N90D Spec and Replacement


   Type Designator: HM70N90D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 145 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 883 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: TO263

 HM70N90D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM70N90D Specs

 ..1. Size:675K  cn hmsemi
hm70n90d.pdf pdf_icon

HM70N90D

N-Channel Trench Power MOSFET General Description General Description General Description General Description The is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching especially for E-Bike controller applications. Features Features Features Featu... See More ⇒

 9.1. Size:583K  cn hmsemi
hm70n78.pdf pdf_icon

HM70N90D

HM70N78 N-Channel Trench Power MOSFET General Description General Description General Description General Description The HM70N78 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching especially for E-Bike controller applications. Features Features Features Feature... See More ⇒

 9.2. Size:510K  cn hmsemi
hm70n75.pdf pdf_icon

HM70N90D

HM70N75 N-Channel Trench Power MOSFET General Description General Description General Description General Description The HM70N75 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching especially for E-Bike controller applications. Features Features Features Featur... See More ⇒

 9.3. Size:397K  cn hmsemi
hm70n20t.pdf pdf_icon

HM70N90D

General Description VDSS 200 V , the silicon N-channel Enhanced ID 70 A PD(TC=25 ) 367 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 29.5 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturiz... See More ⇒

Detailed specifications: HM70N15 , HM70N20T , HM70N75 , HM70N75D , HM70N78 , HM70N80 , HM70N80A , HM70N88 , 2N7002 , HM70P02D , HM70P03 , HM70P03K , HM70P04 , HM730 , HM730F , HM740 , HM740F .

History: HM70P02D

Keywords - HM70N90D MOSFET specs

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