HM75N06 Spec and Replacement
Type Designator: HM75N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 237 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: TO220
HM75N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM75N06 Specs
hm75n06.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON) ... See More ⇒
hm75n06k.pdf
HM75N06K N-Channel Enhancement Mode Power MOSFET Description The HM75N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON) ... See More ⇒
hm75n07k.pdf
HM75N07K Description The HM75N07K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =70V,ID =75A RDS(ON) ... See More ⇒
hm75n75.pdf
HM75N N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N uses advanced trench technology and BVDSS typ. 75 design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 7.0 m This device is suitable for use in PWM, load switching and max. 9.0 m general purpose applications. ID 75 A Features VDS=75V ID= A@ ... See More ⇒
Detailed specifications: HM70P02D , HM70P03 , HM70P03K , HM70P04 , HM730 , HM730F , HM740 , HM740F , SKD502T , HM75N06K , HM75N07K , HM75N20 , HM75N75 , HM75N75K , HM75N80 , HM75N80D , HM7746K .
History: HM740F
Keywords - HM75N06 MOSFET specs
HM75N06 cross reference
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History: HM740F
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