HM75N07K
MOSFET. Datasheet pdf. Equivalent
Type Designator: HM75N07K
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 110
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 50
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 237
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0084
Ohm
Package:
TO252
HM75N07K
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM75N07K
Datasheet (PDF)
..1. Size:611K cn hmsemi
hm75n07k.pdf 
HM75N07KDescription The HM75N07K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =70V,ID =75A RDS(ON)
8.1. Size:569K cn hmsemi
hm75n06.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)
8.2. Size:519K cn hmsemi
hm75n06k.pdf
HM75N06KN-Channel Enhancement Mode Power MOSFET Description The HM75N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)
9.1. Size:678K cn hmsemi
hm75n75.pdf
HM75N N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N uses advanced trench technology and BVDSS typ. 75 design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 7.0 mThis device is suitable for use in PWM, load switching and max. 9.0 m general purpose applications. ID 75 A Features VDS=75VID= A@
9.2. Size:595K cn hmsemi
hm75n80.pdf
HM75N80 N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N80 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applications. ID 80 A Features VDS=75VID=80
9.3. Size:477K cn hmsemi
hm75n20.pdf
HM75N20N-Channel Enhancement Mode Power MOSFET Description The HM75N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =200V,ID =75A Schematic diagram RDS(ON)
9.4. Size:500K cn hmsemi
hm75n80d.pdf
HM75N80DN-Channel Enhancement Mode Power MOSFET Description The HM75N80D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS = 75V,ID =80A Schematic diagram RDS(ON)
9.5. Size:870K cn hmsemi
hm75n75k.pdf
HM75N N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N uses advanced trench technology and BVDSS typ. 75 design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 7.0 mThis device is suitable for use in PWM, load switching and max. 9.0 m general purpose applications. ID 75 A Features VDS=75VID= A
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