All MOSFET. HM75N75K Datasheet

 

HM75N75K MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM75N75K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 11.8 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO252

 HM75N75K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM75N75K Datasheet (PDF)

 ..1. Size:870K  cn hmsemi
 hm75n75k.pdf

HM75N75K HM75N75K

HM75N N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N uses advanced trench technology and BVDSS typ. 75 design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 7.0 mThis device is suitable for use in PWM, load switching and max. 9.0 m general purpose applications. ID 75 A Features VDS=75VID= A

 7.1. Size:678K  cn hmsemi
 hm75n75.pdf

HM75N75K HM75N75K

HM75N N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N uses advanced trench technology and BVDSS typ. 75 design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 7.0 mThis device is suitable for use in PWM, load switching and max. 9.0 m general purpose applications. ID 75 A Features VDS=75VID= A@

 9.1. Size:569K  cn hmsemi
 hm75n06.pdf

HM75N75K HM75N75K

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)

 9.2. Size:595K  cn hmsemi
 hm75n80.pdf

HM75N75K HM75N75K

HM75N80 N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N80 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applications. ID 80 A Features VDS=75VID=80

 9.3. Size:477K  cn hmsemi
 hm75n20.pdf

HM75N75K HM75N75K

HM75N20N-Channel Enhancement Mode Power MOSFET Description The HM75N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =200V,ID =75A Schematic diagram RDS(ON)

 9.4. Size:611K  cn hmsemi
 hm75n07k.pdf

HM75N75K HM75N75K

HM75N07KDescription The HM75N07K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =70V,ID =75A RDS(ON)

 9.5. Size:519K  cn hmsemi
 hm75n06k.pdf

HM75N75K HM75N75K

HM75N06KN-Channel Enhancement Mode Power MOSFET Description The HM75N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)

 9.6. Size:500K  cn hmsemi
 hm75n80d.pdf

HM75N75K HM75N75K

HM75N80DN-Channel Enhancement Mode Power MOSFET Description The HM75N80D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS = 75V,ID =80A Schematic diagram RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: OSG70R2K6DF | 2N7271H

 

 
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