All MOSFET. HM75N75K Equivalents Search

HM75N N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N uses advanced trench technology and BVDSS typ. 75 design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 7.0 m This device is suitable for use in PWM, load switching and max. 9.0 m general purpose applications. ID 75 A Features VDS=75V ID= A... See More ⇒

HM75N N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N uses advanced trench technology and BVDSS typ. 75 design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 7.0 m This device is suitable for use in PWM, load switching and max. 9.0 m general purpose applications. ID 75 A Features VDS=75V ID= A@ ... See More ⇒

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON) ... See More ⇒

HM75N80 N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N80 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applications. ID 80 A Features VDS=75V ID=80... See More ⇒

HM75N20 N-Channel Enhancement Mode Power MOSFET Description The HM75N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =200V,ID =75A Schematic diagram RDS(ON) ... See More ⇒

HM75N07K Description The HM75N07K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =70V,ID =75A RDS(ON) ... See More ⇒

HM75N06K N-Channel Enhancement Mode Power MOSFET Description The HM75N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON) ... See More ⇒

HM75N80D N-Channel Enhancement Mode Power MOSFET Description The HM75N80D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS = 75V,ID =80A Schematic diagram RDS(ON) ... See More ⇒