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HM75N80D Spec and Replacement


   Type Designator: HM75N80D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11.8 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO263

 HM75N80D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM75N80D Specs

 ..1. Size:500K  cn hmsemi
 hm75n80d.pdf pdf_icon

HM75N80D

HM75N80D N-Channel Enhancement Mode Power MOSFET Description The HM75N80D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS = 75V,ID =80A Schematic diagram RDS(ON) ... See More ⇒

 7.1. Size:595K  cn hmsemi
 hm75n80.pdf pdf_icon

HM75N80D

HM75N80 N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N80 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applications. ID 80 A Features VDS=75V ID=80... See More ⇒

 9.1. Size:678K  cn hmsemi
 hm75n75.pdf pdf_icon

HM75N80D

HM75N N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N uses advanced trench technology and BVDSS typ. 75 design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 7.0 m This device is suitable for use in PWM, load switching and max. 9.0 m general purpose applications. ID 75 A Features VDS=75V ID= A@ ... See More ⇒

 9.2. Size:569K  cn hmsemi
 hm75n06.pdf pdf_icon

HM75N80D

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON) ... See More ⇒

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Detailed specifications: HM740F , HM75N06 , HM75N06K , HM75N07K , HM75N20 , HM75N75 , HM75N75K , HM75N80 , IRFB3607 , HM7746K , HM7N60 , HM7N60F , HM7N60I , HM7N60K , HM7N65 , HM7N65F , HM7N65I .

History: IPP60R190P6 | AP02N90JB

Keywords - HM75N80D MOSFET specs

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