All MOSFET. HM7N65K Datasheet

 

HM7N65K MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM7N65K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
   Package: TO252

 HM7N65K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM7N65K Datasheet (PDF)

 ..1. Size:501K  cn hmsemi
hm7n65k hm7n65i.pdf

HM7N65K
HM7N65K

HM7N65K / HM7N65I HM7N65K / HM7N65I 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.0A, 650V, RDS(on) = 1.35 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior sw

 8.1. Size:340K  cn hmsemi
hm7n65 hm7n65f.pdf

HM7N65K
HM7N65K

/ / 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.0A, 650V, RDS(on) = 1.26 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superio

 9.1. Size:666K  cn hmsemi
hm7n60k hm7n60i.pdf

HM7N65K
HM7N65K

HM7N60K / HM7N60IHM7N60K / HM7N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switchin

 9.2. Size:324K  cn hmsemi
hm7n60 hm7n60f.pdf

HM7N65K
HM7N65K

HM7N60 / HM7N60F600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 29nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching Fast switchin

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HM4N60K | HYG025N06LS1P

 

 
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