HM7N65K Datasheet. Specs and Replacement

Type Designator: HM7N65K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm

Package: TO252

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HM7N65K substitution

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HM7N65K datasheet

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 hm7n65k hm7n65i.pdf pdf_icon

HM7N65K

HM7N65K / HM7N65I HM7N65K / HM7N65I 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.0A, 650V, RDS(on) = 1.35 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior sw... See More ⇒

 8.1. Size:340K  cn hmsemi
 hm7n65 hm7n65f.pdf pdf_icon

HM7N65K

/ / 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.0A, 650V, RDS(on) = 1.26 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superio... See More ⇒

 9.1. Size:666K  cn hmsemi
 hm7n60k hm7n60i.pdf pdf_icon

HM7N65K

HM7N60K / HM7N60I HM7N60K / HM7N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switchin... See More ⇒

 9.2. Size:324K  cn hmsemi
 hm7n60 hm7n60f.pdf pdf_icon

HM7N65K

HM7N60 / HM7N60F 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 7.5A, 600V, RDS(on) = 1.20 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 29nC) This advanced technology has been especially tailored to High ruggedness minimize on-state resistance, provide superior switching Fast switchin... See More ⇒

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Detailed specifications: HM7746K, HM7N60, HM7N60F, HM7N60I, HM7N60K, HM7N65, HM7N65F, HM7N65I, 5N60, HM7N80, HM7N80D, HM7N80F, HM80N03, HM80N03A, HM80N03I, HM80N03K, HM80N03KA

Keywords - HM7N65K MOSFET specs

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