All MOSFET. HM7N80 Datasheet

 

HM7N80 Datasheet and Replacement


   Type Designator: HM7N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: TO220
 

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HM7N80 Datasheet (PDF)

 ..1. Size:328K  cn hmsemi
 hm7n80 hm7n80f.pdf pdf_icon

HM7N80

HM7N80 / HM7N80F HM7N80 / HM7N80F 800V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 7.0A, 800V, RDS(on) = 1.90 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 27nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switchin

 0.1. Size:491K  cn hmsemi
 hm7n80d.pdf pdf_icon

HM7N80

HM7N80D General Description VDSS 800 V , the silicon N-channel Enhanced ID 7 A PD(TC=25) 185 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization

Datasheet: HM7N60 , HM7N60F , HM7N60I , HM7N60K , HM7N65 , HM7N65F , HM7N65I , HM7N65K , 18N50 , HM7N80D , HM7N80F , HM80N03 , HM80N03A , HM80N03I , HM80N03K , HM80N03KA , HM80N04 .

History: CTLM8110-M832D | HSS2306A

Keywords - HM7N80 MOSFET datasheet

 HM7N80 cross reference
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