HM80N03KA Datasheet and Replacement
Type Designator: HM80N03KA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 460 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO252
HM80N03KA Datasheet (PDF)
hm80n03ka.pdf

HM80N03KAN-Channel Enhancement Mode Power MOSFET Description The HM80N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
hm80n03k.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
hm80n03i.pdf

HM80N03IN-Channel Enhancement Mode Power MOSFET Description The HM80N03I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
hm80n03.pdf

HM80N03N-Channel Enhancement Mode Power MOSFET Description The HM80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
Datasheet: HM7N65K , HM7N80 , HM7N80D , HM7N80F , HM80N03 , HM80N03A , HM80N03I , HM80N03K , SKD502T , HM80N04 , HM80N04K , HM80N05K , HM80N06K , HM80N06KA , HM80N08K , HM80N15 , HM80N70 .
History: 2SK1254S | NCE0157AK | IRLI2203NPBF
Keywords - HM80N03KA MOSFET datasheet
HM80N03KA cross reference
HM80N03KA equivalent finder
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History: 2SK1254S | NCE0157AK | IRLI2203NPBF



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