HM80N70 Datasheet and Replacement
Type Designator: HM80N70
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Id| ⓘ - Maximum Drain Current: 66
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
tr ⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 290
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package:
TO220
-
MOSFET ⓘ Cross-Reference Search
HM80N70 Datasheet (PDF)
..1. Size:795K cn hmsemi
hm80n70.pdf 
80VDS25VGS66A(ID) N-Channel Enha ncement Mode MOSFET Features Pin Description VDSS=80VVGSS=25VID=66A RDS(ON)=12m(Max.)@VGS=10V Reliable and Rugged Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Applications Synchronous
8.1. Size:112K chenmko
chm80n75ngp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM80N75NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 75 Volts CURRENT 80 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)0.420(10.67)0.190(4.83)* Super high dense cell design for extremely low RDS(ON). 0.380(9.69)0.160(4.
9.1. Size:988K cn hmsemi
hm80n08k.pdf
HM80N08K N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM80N08K uses advanced trench technology and BVDSS typ. 80 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applications. ID 80 A Features VDS=80VID=
9.2. Size:602K cn hmsemi
hm80n03i.pdf
HM80N03IN-Channel Enhancement Mode Power MOSFET Description The HM80N03I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
9.3. Size:517K cn hmsemi
hm80n05k.pdf
HM80N05K N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =50V,ID =80A RDS(ON)
9.4. Size:583K cn hmsemi
hm80n03.pdf
HM80N03N-Channel Enhancement Mode Power MOSFET Description The HM80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
9.5. Size:421K cn hmsemi
hm80n15.pdf
HM80N15 N-Channel Enhancement Mode Power MOSFET Description The HM80N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =79A RDS(ON)
9.6. Size:542K cn hmsemi
hm80n80b.pdf
MOSFET Features 80V,80A N-Channel MOSFET Rdson
9.7. Size:564K cn hmsemi
hm80n06k.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)
9.8. Size:511K cn hmsemi
hm80n03k.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
9.9. Size:702K cn hmsemi
hm80n06ka.pdf
HM80N06KAN-Channel Enhancement Mode Power MOSFET Description The HM80N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)
9.10. Size:674K cn hmsemi
hm80n03ka.pdf
HM80N03KAN-Channel Enhancement Mode Power MOSFET Description The HM80N03KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
9.11. Size:713K cn hmsemi
hm80n04.pdf
HM80N04N-Channel Enhancement Mode Power MOSFET Description The HM80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A RDS(ON)
9.12. Size:841K cn hmsemi
hm80n03a.pdf
HM80N03AN-Channel Enhancement Mode Power MOSFET Description The HM80N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)
9.13. Size:750K cn hmsemi
hm80n04k.pdf
HM80N04KN-Channel Enhancement Mode Power MOSFET Description The HM80N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =80A RDS(ON)
9.14. Size:602K cn hmsemi
hm80n80.pdf
HM80N80 N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM80N80 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applications. ID 80 A Features VDS= VID=80
Datasheet: HM80N03KA
, HM80N04
, HM80N04K
, HM80N05K
, HM80N06K
, HM80N06KA
, HM80N08K
, HM80N15
, AON6380
, HM80N80
, HM80N80B
, HM8205
, HM8205A
, HM8205D
, HM8205Q
, HM830
, HM830F
.
History: SI8410DB
| IPB80N06S2L-11
| AP30T10GK
Keywords - HM80N70 MOSFET datasheet
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