Справочник MOSFET. HM80N70

 

HM80N70 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HM80N70
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 66 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 290 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для HM80N70

   - подбор ⓘ MOSFET транзистора по параметрам

 

HM80N70 Datasheet (PDF)

 ..1. Size:795K  cn hmsemi
hm80n70.pdfpdf_icon

HM80N70

80VDS25VGS66A(ID) N-Channel Enha ncement Mode MOSFET Features Pin Description VDSS=80VVGSS=25VID=66A RDS(ON)=12m(Max.)@VGS=10V Reliable and Rugged Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Applications Synchronous

 8.1. Size:112K  chenmko
chm80n75ngp.pdfpdf_icon

HM80N70

CHENMKO ENTERPRISE CO.,LTDCHM80N75NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 75 Volts CURRENT 80 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)0.420(10.67)0.190(4.83)* Super high dense cell design for extremely low RDS(ON). 0.380(9.69)0.160(4.

 9.1. Size:988K  cn hmsemi
hm80n08k.pdfpdf_icon

HM80N70

HM80N08K N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM80N08K uses advanced trench technology and BVDSS typ. 80 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applications. ID 80 A Features VDS=80VID=

 9.2. Size:602K  cn hmsemi
hm80n03i.pdfpdf_icon

HM80N70

HM80N03IN-Channel Enhancement Mode Power MOSFET Description The HM80N03I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =80A RDS(ON)

Другие MOSFET... HM80N03KA , HM80N04 , HM80N04K , HM80N05K , HM80N06K , HM80N06KA , HM80N08K , HM80N15 , AON6380 , HM80N80 , HM80N80B , HM8205 , HM8205A , HM8205D , HM8205Q , HM830 , HM830F .

 

 
Back to Top

 


 
.