All MOSFET. FDMC7692S Datasheet

 

FDMC7692S MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDMC7692S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm
   Package: POWER33

 FDMC7692S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMC7692S Datasheet (PDF)

 ..1. Size:328K  fairchild semi
fdmc7692s.pdf

FDMC7692S FDMC7692S

September 2010FDMC7692SN-Channel Power Trench SyncFETTM 30 V, 12.5 A, 9.3 mFeatures General DescriptionThis FDMC7692S is produced using Fairchild Semiconductors Max rDS(on) = 9.3 m at VGS = 10 V, ID = 12.5 Aadvanced Power Trench process that has been especially Max rDS(on) = 13.6 m at VGS = 4.5 V, ID = 10.4 Atailored to minimize the on-state resistance. This

 6.1. Size:319K  fairchild semi
fdmc7692.pdf

FDMC7692S FDMC7692S

September 2010FDMC7692N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m Features General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.3 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 11.5 m at VGS = 4.5 V, ID = 10.6 Abeen especially tailored to minimize the on-state resistance. This H

 6.2. Size:469K  onsemi
fdmc7692.pdf

FDMC7692S FDMC7692S

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

 7.1. Size:272K  fairchild semi
fdmc7696.pdf

FDMC7692S FDMC7692S

November 2011FDMC7696N-Channel PowerTrench MOSFET 30 V, 12 A, 11.5 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 12 ASemiconductors advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10 Abeen especially tailored to minimize the on-state resistance.This device

Datasheet: FDMC7672S , STS2305 , FDMC7678 , STS2302A , FDMC7680 , STS2301A , FDMC7692 , STS2301 , IRF830 , STS2300S , FDMC7696 , STS126 , FDMC8015L , FDMC8026S , STP80L60 , FDMC8200 , STP70L60 .

 

 
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