September 2010FDMC7692SN-Channel Power Trench SyncFETTM 30 V, 12.5 A, 9.3 mFeatures General DescriptionThis FDMC7692S is produced using Fairchild Semiconductors Max rDS(on) = 9.3 m at VGS = 10 V, ID = 12.5 Aadvanced Power Trench process that has been especially Max rDS(on) = 13.6 m at VGS = 4.5 V, ID = 10.4 Atailored to minimize the on-state resistance. This

September 2010FDMC7692N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m Features General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.3 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 11.5 m at VGS = 4.5 V, ID = 10.6 Abeen especially tailored to minimize the on-state resistance. This H

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November 2011FDMC7696N-Channel PowerTrench MOSFET 30 V, 12 A, 11.5 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 12 ASemiconductors advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10 Abeen especially tailored to minimize the on-state resistance.This device