All MOSFET. HM840F Datasheet

 

HM840F MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM840F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO220F

 HM840F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM840F Datasheet (PDF)

 ..1. Size:319K  cn hmsemi
 hm840 hm840f.pdf

HM840F HM840F

840 / 840F 500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 9.0A, 500V, RDS(on) = 0.85 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 30nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche

 9.1. Size:111K  chenmko
 chm8401jgp.pdf

HM840F HM840F

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM8401JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 30 Volts CURRENT 7.5 AmpereP-channel: VOLTAGE 30 Volts CURRENT 5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low R

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: SVF20N50F | HUF75329P3

 

 
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