All MOSFET. HM840F Datasheet

 

HM840F Datasheet and Replacement


   Type Designator: HM840F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO220F
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HM840F Datasheet (PDF)

 ..1. Size:319K  cn hmsemi
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HM840F

840 / 840F 500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 9.0A, 500V, RDS(on) = 0.85 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 30nC)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche

 9.1. Size:111K  chenmko
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HM840F

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT CHM8401JGPDual Enhancement Mode Field Effect TransistorN-channel: VOLTAGE 30 Volts CURRENT 7.5 AmpereP-channel: VOLTAGE 30 Volts CURRENT 5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low R

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: MTC2804Q8 | 2SK3338N | 2SK1746 | CSD19532Q5B | AS3401 | 2N4391CSM | DMTH4007LPS

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