HM840F Datasheet. Specs and Replacement

Type Designator: HM840F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO220F

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HM840F datasheet

 ..1. Size:319K  cn hmsemi
 hm840 hm840f.pdf pdf_icon

HM840F

840 / 840F 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 9.0A, 500V, RDS(on) = 0.85 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 30nC) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche ... See More ⇒

 9.1. Size:111K  chenmko
 chm8401jgp.pdf pdf_icon

HM840F

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHM8401JGP Dual Enhancement Mode Field Effect Transistor N-channel VOLTAGE 30 Volts CURRENT 7.5 Ampere P-channel VOLTAGE 30 Volts CURRENT 5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low R... See More ⇒

Detailed specifications: HM80N80B, HM8205, HM8205A, HM8205D, HM8205Q, HM830, HM830F, HM840, IRFZ24N, HM85N02, HM85N02K, HM85N80, HM85N90, HM85N95D, HM85P02, HM85P02D, HM85P02K

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