HM85N95D Datasheet. Specs and Replacement
Type Designator: HM85N95D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 95 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 353 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO263
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HM85N95D substitution
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HM85N95D datasheet
hm85n95d.pdf
HM85N95D N-Channel Enhancement Mode Power MOSFET Description The HM85N95D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON) ... See More ⇒
hm85n90.pdf
HM85N90 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM85N90 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 82V,ID =90A RDS(ON) ... See More ⇒
hm85n02k.pdf
HM K Description The HM85N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =85A RDS(ON) ... See More ⇒
hm85n80.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =85V,ID =80A Schematic diagram RDS(ON) ... See More ⇒
Detailed specifications: HM830, HM830F, HM840, HM840F, HM85N02, HM85N02K, HM85N80, HM85N90, 8N65, HM85P02, HM85P02D, HM85P02K, HM8810A, HM8810S, HM8N20, HM8N20A, HM8N20I
Keywords - HM85N95D MOSFET specs
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