HM85P02 MOSFET. Datasheet pdf. Equivalent

   Type Designator: HM85P02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 577 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO220

HM85P02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HM85P02 Datasheet (PDF)

..1. Size:1085K cn hmsemi
hm85p02.pdf

HM85P02P-Channel Enhancement Mode Power MOSFET Description The HM85P02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON)

0.1. Size:1007K cn hmsemi
hm85p02k.pdf

HM85P02KP-Channel Enhancement Mode Power MOSFET Description The HM85P02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON)

0.2. Size:430K cn hmsemi
hm85p02d.pdf

P-Channel Enhancement Mode Power MOSFET Description The HM85P02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON)

8.1. Size:684K cn hmsemi
hm85p03k.pdf