HM85P02D Datasheet and Replacement
Type Designator: HM85P02D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 135 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 1662 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: DFN5X6-8L
HM85P02D substitution
HM85P02D Datasheet (PDF)
hm85p02d.pdf

P-Channel Enhancement Mode Power MOSFET Description The HM85P02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON)
hm85p02k.pdf

HM85P02KP-Channel Enhancement Mode Power MOSFET Description The HM85P02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON)
hm85p02.pdf

HM85P02P-Channel Enhancement Mode Power MOSFET Description The HM85P02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON)
hm85p03k.pdf

HM85P03K -30VDS25VGS85A(ID) P-Channel Enhancement Mode MOSFET Features Pin Description VDSS= -30VVGSS=25VID=85A RDS(ON)
Datasheet: HM840 , HM840F , HM85N02 , HM85N02K , HM85N80 , HM85N90 , HM85N95D , HM85P02 , IRF9640 , HM85P02K , HM8810A , HM8810S , HM8N20 , HM8N20A , HM8N20I , HM8N20K , HM8N20KA .
History: AM4462N | BL4N150-B | 2P829B | TPCA8008-H | CS5N65A3 | GSM6424 | NCE70N900I
Keywords - HM85P02D MOSFET datasheet
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History: AM4462N | BL4N150-B | 2P829B | TPCA8008-H | CS5N65A3 | GSM6424 | NCE70N900I



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