All MOSFET. HM85P02D Datasheet

 

HM85P02D Datasheet and Replacement


   Type Designator: HM85P02D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 1662 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: DFN5X6-8L
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HM85P02D Datasheet (PDF)

 ..1. Size:430K  cn hmsemi
 hm85p02d.pdf pdf_icon

HM85P02D

P-Channel Enhancement Mode Power MOSFET Description The HM85P02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON)

 7.1. Size:1007K  cn hmsemi
 hm85p02k.pdf pdf_icon

HM85P02D

HM85P02KP-Channel Enhancement Mode Power MOSFET Description The HM85P02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON)

 7.2. Size:1085K  cn hmsemi
 hm85p02.pdf pdf_icon

HM85P02D

HM85P02P-Channel Enhancement Mode Power MOSFET Description The HM85P02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON)

 8.1. Size:684K  cn hmsemi
 hm85p03k.pdf pdf_icon

HM85P02D

HM85P03K -30VDS25VGS85A(ID) P-Channel Enhancement Mode MOSFET Features Pin Description VDSS= -30VVGSS=25VID=85A RDS(ON)

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History: BSZ035N03LSG | SVF9N90F

Keywords - HM85P02D MOSFET datasheet

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