HM85P02D Datasheet. Specs and Replacement

Type Designator: HM85P02D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 1662 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: DFN5X6-8L

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HM85P02D datasheet

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HM85P02D

P-Channel Enhancement Mode Power MOSFET Description The HM85P02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON) ... See More ⇒

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HM85P02D

HM85P02K P-Channel Enhancement Mode Power MOSFET Description The HM85P02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON) ... See More ⇒

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HM85P02D

HM85P02 P-Channel Enhancement Mode Power MOSFET Description The HM85P02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-20V,ID =-85A Schematic diagram RDS(ON) ... See More ⇒

 8.1. Size:684K  cn hmsemi
 hm85p03k.pdf pdf_icon

HM85P02D

HM85P03K -30VDS 25VGS 85A(ID) P-Channel Enhancement Mode MOSFET Features Pin Description VDSS= -30V VGSS= 25V ID=85A RDS(ON) ... See More ⇒

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Detailed specifications: HM840, HM840F, HM85N02, HM85N02K, HM85N80, HM85N90, HM85N95D, HM85P02, SI2302, HM85P02K, HM8810A, HM8810S, HM8N20, HM8N20A, HM8N20I, HM8N20K, HM8N20KA

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