All MOSFET. HM8810S Datasheet

 

HM8810S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM8810S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SOT23-6

 HM8810S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM8810S Datasheet (PDF)

 ..1. Size:869K  cn hmsemi
 hm8810s.pdf

HM8810S HM8810S

HM8810SDual N-Channel Trench Power MOSFETGeneral DescriptionThe HM8810S uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aBattery protection or in other Switching applications.Schematic DiagramFeatures VDS = 20V,ID =5A HM8810SR

 8.1. Size:1022K  cn vbsemi
 hm8810e.pdf

HM8810S HM8810S

HM8810Ewww.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G2S2 G23 4

 8.2. Size:881K  cn hmsemi
 hm8810a.pdf

HM8810S HM8810S

HM Dual N-Channel Trench Power MOSFETGeneral DescriptionThe HM uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aBattery protection or in other Switching applications.Schematic DiagramFeatures VDS = 20V,ID =7A HM R

 8.3. Size:673K  cn hmsemi
 hm8810e.pdf

HM8810S HM8810S

HM8810EDual N-Channel Enhancement Mode Power MOSFET Description The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features VDS = 20V,ID =7A RDS(ON)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top