HM8N20I Spec and Replacement
Type Designator: HM8N20I
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO251
HM8N20I Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM8N20I Specs
hm8n20i.pdf
N-Channel Enhancement Mode Power MOSFET Description The HM8N20I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON) ... See More ⇒
hm8n20ka.pdf
HM8N20KA N-Channel Enhancement Mode Power MOSFET Description The HM8N20KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON) ... See More ⇒
hm8n20a.pdf
HM8N20A N-Channel Enhancement Mode Power MOSFET Description The HM8N20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON) ... See More ⇒
hm8n20.pdf
HM8N20 N-Channel Enhancement Mode Power MOSFET Description The HM8N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON) ... See More ⇒
Detailed specifications: HM85N95D , HM85P02 , HM85P02D , HM85P02K , HM8810A , HM8810S , HM8N20 , HM8N20A , 60N06 , HM8N20K , HM8N20KA , HM8N25K , HM8P02MR , HM90N04D , HM90N06D , HM9435 , HM9435A .
Keywords - HM8N20I MOSFET specs
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