HM8N20I Datasheet. Specs and Replacement
Type Designator: HM8N20I 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO251
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HM8N20I substitution
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HM8N20I datasheet
hm8n20i.pdf
N-Channel Enhancement Mode Power MOSFET Description The HM8N20I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON) ... See More ⇒
hm8n20ka.pdf
HM8N20KA N-Channel Enhancement Mode Power MOSFET Description The HM8N20KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON) ... See More ⇒
hm8n20a.pdf
HM8N20A N-Channel Enhancement Mode Power MOSFET Description The HM8N20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON) ... See More ⇒
hm8n20.pdf
HM8N20 N-Channel Enhancement Mode Power MOSFET Description The HM8N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON) ... See More ⇒
Detailed specifications: HM85N95D, HM85P02, HM85P02D, HM85P02K, HM8810A, HM8810S, HM8N20, HM8N20A, IRF9640, HM8N20K, HM8N20KA, HM8N25K, HM8P02MR, HM90N04D, HM90N06D, HM9435, HM9435A
Keywords - HM8N20I MOSFET specs
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