FDMC7696 Datasheet. Specs and Replacement
Type Designator: FDMC7696 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: POWER33
FDMC7696 substitution
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FDMC7696 datasheet
fdmc7696.pdf
November 2011 FDMC7696 N-Channel PowerTrench MOSFET 30 V, 12 A, 11.5 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 12 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10 A been especially tailored to minimize the on-state resistance.This device... See More ⇒
fdmc7692s.pdf
September 2010 FDMC7692S N-Channel Power Trench SyncFETTM 30 V, 12.5 A, 9.3 m Features General Description This FDMC7692S is produced using Fairchild Semiconductor s Max rDS(on) = 9.3 m at VGS = 10 V, ID = 12.5 A advanced Power Trench process that has been especially Max rDS(on) = 13.6 m at VGS = 4.5 V, ID = 10.4 A tailored to minimize the on-state resistance. This ... See More ⇒
fdmc7692.pdf
September 2010 FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m Features General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 11.5 m at VGS = 4.5 V, ID = 10.6 A been especially tailored to minimize the on-state resistance. This H... See More ⇒
fdmc7692.pdf
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Detailed specifications: FDMC7678, STS2302A, FDMC7680, STS2301A, FDMC7692, STS2301, FDMC7692S, STS2300S, IRFZ44N, STS126, FDMC8015L, FDMC8026S, STP80L60, FDMC8200, STP70L60, FDMC8200S, STP656F
Keywords - FDMC7696 MOSFET specs
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