FDMC7696 - описание и поиск аналогов

November 2011 FDMC7696 N-Channel PowerTrench MOSFET 30 V, 12 A, 11.5 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 12 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10 A been especially tailored to minimize the on-state resistance.This device

September 2010 FDMC7692S N-Channel Power Trench SyncFETTM 30 V, 12.5 A, 9.3 m Features General Description This FDMC7692S is produced using Fairchild Semiconductor s Max rDS(on) = 9.3 m at VGS = 10 V, ID = 12.5 A advanced Power Trench process that has been especially Max rDS(on) = 13.6 m at VGS = 4.5 V, ID = 10.4 A tailored to minimize the on-state resistance. This

September 2010 FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m Features General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 11.5 m at VGS = 4.5 V, ID = 10.6 A been especially tailored to minimize the on-state resistance. This H

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