November 2011FDMC7696N-Channel PowerTrench MOSFET 30 V, 12 A, 11.5 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 12 ASemiconductors advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10 Abeen especially tailored to minimize the on-state resistance.This device

September 2010FDMC7692SN-Channel Power Trench SyncFETTM 30 V, 12.5 A, 9.3 mFeatures General DescriptionThis FDMC7692S is produced using Fairchild Semiconductors Max rDS(on) = 9.3 m at VGS = 10 V, ID = 12.5 Aadvanced Power Trench process that has been especially Max rDS(on) = 13.6 m at VGS = 4.5 V, ID = 10.4 Atailored to minimize the on-state resistance. This

September 2010FDMC7692N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m Features General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.3 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 11.5 m at VGS = 4.5 V, ID = 10.6 Abeen especially tailored to minimize the on-state resistance. This H

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth