HMS120N03D MOSFET. Datasheet pdf. Equivalent
Type Designator: HMS120N03D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 63 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 950 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00235 Ohm
Package: DFN5X6-8L
HMS120N03D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HMS120N03D Datasheet (PDF)
hms120n03d.pdf
HMS120N03DN-Channel Super Trench Power MOSFET Description The HMS120N03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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