STP80L60 Datasheet and Replacement

   Type Designator: STP80L60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Qg ⓘ - Total Gate Charge: 26 nC
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0097 Ohm
   Package: TO220

STP80L60 substitution

- MOSFET ⓘ Cross-Reference Search

STP80L60 Datasheet (PDF)

..1. Size:176K samhop
stb80l60 stp80l60.pdf pdf_icon

GreenProductSTB/P80L60aS mHop Microelectronics C orp.Ver 2.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).VDSS ID RDS(ON) (m) TypHigh power and current handling capability.60V 80A 8.0 @ VGS=10VTO-220 & TO-263 package.DGSTP SERIESSTB SERIESTO-220TO-263(DD-P AK)S

9.1. Size:447K st
stb80nf55-06 stb80nf55-06-1 stp80nf55-06 stp80nf55-06fp.pdf pdf_icon

STB80NF55-06 - STB80NF55-06-1STP80NF55-06 - STP80NF55-06FPN-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB80NF55-06 55V

9.2. Size:232K st
stp80nf10fp.pdf pdf_icon

STP80NF10FPN-channel 100V - 0.012 - 38A - TO-220FPLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) ID(1)STP80NF10FP 100V

9.3. Size:353K st
stp80nf55.pdf pdf_icon

STP80NF55-08STB80NF55-08 STB80NF55-08-1N-CHANNEL 55V - 0.0065 - 80A D2PAK/I2PAK/TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB80NF55-08/-1 55 V

9.4. Size:77K st
stp80n03l-06.pdf pdf_icon

STP80N03L-06N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORTENTATIVE DATA TYPE V R IDSS DS(on) DSTP80N03L-06 30 V

9.5. Size:399K st
stb80nf55l-06 stp80nf55l-06.pdf pdf_icon

STB80NF55L-06STP80NF55L-06N-CHANNEL 55V - 0.005 - 80A DPAK/TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB80NF55L-06 55 V

9.6. Size:579K st
stb80nf10 stp80nf10.pdf pdf_icon

STB80NF10STP80NF10N-channel 100 V, 0.012 , 80 A, TO-220, D2PAKlow gate charge STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP80NF10 100 V

9.7. Size:115K st
stp80ns04zb.pdf pdf_icon

STP80NS04ZBN-CHANNEL CLAMPED 7.5m - 80A TO-220FULLY PROTECTED MESH OVERLAY MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP80NS04ZB CLAMPED

9.8. Size:440K st
stp80nf70.pdf pdf_icon

STP80NF70N-channel 68 V, 0.0082 , 98 A, TO-220STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP80NF70 68 V

9.9. Size:377K st
stb80nf75l stp80nf75l.pdf pdf_icon

STP80NF75LSTB80NF75L STB80NF75L-1N-CHANNEL 75V - 0.008 - 80A TO-220/D2PAK/I2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP80NF75L 75 V

9.10. Size:342K st
stb80pf55 stp80pf55.pdf pdf_icon

STB80PF55STP80PF55P-channel 55 V, 0.016 , 80 A TO-220, D2PAKSTripFETTM II Power MOSFETFeaturesType VDSS RDS(on) IDSTP80PF55 55V

9.11. Size:339K st
stp80nf55l-08.pdf pdf_icon

STP80NF55L-08STB80NF55L-08 - STB80NF55L-08-1N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAKSTripFET II POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP80NF55L-08 55 V 0.008 80 ASTB80NF55L-08 55 V 0.008 80 ASTB80NF55L-08-1 55 V 0.008 80 A33 1TYPICAL RDS(on) = 0.006521D2PAK LOW THRESHOLD DRIVETO-220 LOGIC LEVEL DEVICE321I2PAKDESCR

9.12. Size:360K st
stp80nf03l-04.pdf pdf_icon

STP80NF03L-04STB80NF03L-04 STB80NF03L-04-1N-CHANNEL 30V - 0.0035 - 80A D2PAK/I2PAK/TO-220STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB80NF03L-04/-1 30 V

9.13. Size:209K st
stp80nf03l-04 stp80nf03l.pdf pdf_icon

STP80NF03LN-CHANNEL 30V - 0.004 - 80ATO-220STripFET II MOSFETTYPE VDSS RDS(on) IDSTP80NF03L 30 V

9.14. Size:362K st
stb80nf55-08t4 stp80nf55-08 stw80nf55-08.pdf pdf_icon

STB80NF55-08T4STP80NF55-08, STW80NF55-08N-channel 55 V, 0.0065 , 80 A, TO-220, D2PAK, TO-247STripFET Power MOSFETFeaturesRDS(on) Type VDSS IDmax3STB80NF55-08T4 55 V

9.15. Size:294K st
stp80ns04z.pdf pdf_icon

STP80NS04ZN-CHANNEL CLAMPED 7.5m - 80A TO-220FULLY PROTECTED MESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP80NS04Z CLAMPED

9.16. Size:58K st
stp80ne03l.pdf pdf_icon

STP80NE03L-06N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(o n) IDSTP80NE03L-06 30 V

9.17. Size:308K st
stp80nf06 stb80nf06 stw80nf06.pdf pdf_icon

STP80NF06 - STB80NF06STW80NF06N-channel 60V - 0.0065 - 80A TO-220/D2PAK/TO-247STripFET II Power MOSFETFeaturesType VDSS RDS(on) IDSTB80NF06 60V

9.18. Size:368K st
stp80nf75l.pdf pdf_icon

STP80NF75LSTB80NF75L STB80NF75L-1N-CHANNEL 75V - 0.008 - 80A TO-220/D2PAK/I2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP80NF75L 75 V

9.19. Size:653K st
stp80n70f4.pdf pdf_icon

STP80N70F4N-channel 68 V, 8.2 m typ., 85 A STripFET DeepGATE Power MOSFET in TO-220 packageDatasheet production dataFeaturesOrder code VDSS RDS(on) max IDSTP80N70F4 68 V

9.20. Size:932K st
stb80n20m5 stp80n20m5.pdf pdf_icon

STB80N20M5STP80N20M5N-channel 200 V, 0.019 , 61 A, TO-220, D2PAKMDmesh V Power MOSFETFeaturesVDSS @ RDS(on) Type IDTJmax maxSTB80N20M5 61 A200 V

9.21. Size:456K st
stp80n6f6.pdf pdf_icon

STP80N6F6Automotive-grade N-channel 60 V, 4.4 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a TO-220 packageDatasheet - production dataFeatures Order code VDS RDS(on) max. IDTABSTP80N6F6 60 V 5 m 80 A(1)1. Current limited by package3 Designed for automotive applications and 21AEC-Q101 qualified Low gate chargeTO-220 Very low on-resistance

9.22. Size:334K st
stp80nf10-fp.pdf pdf_icon

STP80NF10STP80NF10FPN-CHANNEL 100V - 0.012 - 80A TO-220/TO-220FPLOW GATE CHARGE STripFETII POWER MOSFETTYPE VDSS RDS(on) IDSTP80NF10 100 V

9.23. Size:1361K st
std80n10f7 stf80n10f7 sth80n10f7-2 stp80n10f7.pdf pdf_icon

STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7N-channel 100 V, 0.008 typ., 80 A STripFET VII DeepGATE Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220Datasheet - production dataFeaturesTABVDS @ RDS(on) 3Order codes ID PTOTTJmax max1DPAK 3STD80N10F7 0.01 70 A 85 W21TO-220FP STF80N10F7 0.01 40 A 30 W100 VTABTAB STH80N10F7-2 0.0095 80 A

9.24. Size:185K st
stp80ne03l-06.pdf pdf_icon

STP80NE03L-06N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP80NE03L-06 30 V

9.25. Size:267K st
stp80nf12.pdf pdf_icon

STP80NF12N-channel 120 V, 0.013 , 80 A, TO-220STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTP80NF12 120 V

9.26. Size:104K st
stp80pf55.pdf pdf_icon

STP80PF55P-CHANNEL 55V - 0.016 - 80A TO-220STripFET II POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTB80PF55 55 V

9.27. Size:773K st
stp80n70f6.pdf pdf_icon

STP80N70F6N-channel 68 V, 0.0063 typ., 96 A STripFET VI DeepGATE Power MOSFET in TO-220 packageDatasheet - production dataFeaturesTABVDSS Order code RDS(on) max. ID PTOTmax.

9.28. Size:77K st
stp80n06-10.pdf pdf_icon

STP80N06-10N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP80N06-10 60 V

9.29. Size:437K st
stb80nf55-06-1 stb80nf55-06t4 stp80nf55-06fp.pdf pdf_icon

STB80NF55-06 - STB80NF55-06-1STP80NF55-06 - STP80NF55-06FPN-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB80NF55-06 55V

9.30. Size:235K st
stp80ne06-10.pdf pdf_icon

STP80NE06-10N-CHANNEL 60V - 0.0085 - 80A TO-220"SINGLE FEATURE SIZE" MOSFETTable 1. General Features Figure 1. PackageType VDSS RDS(on) IDSTP80NE06-10 60 V

9.31. Size:114K st
stp80n05-09.pdf pdf_icon

STP80N05-09N - CHANNEL ENHANCEMENT MODEULTRA HIGH DENSITY POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP80N05-09 50 V

9.32. Size:195K st
stp80nf55l-08 stb80nf55l-08 stb80nf55l-08-1.pdf pdf_icon

STP80NF55L-08STB80NF55L-08 - STB80NF55L-08-1N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAKSTripFET II POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP80NF55L-08 55 V 0.008 80 ASTB80NF55L-08 55 V 0.008 80 ASTB80NF55L-08-1 55 V 0.008 80 A33 1 TYPICAL RDS(on) = 0.006521D2PAK LOW THRESHOLD DRIVETO-220 LOGIC LEVEL DEVICE321I2PAKDESC

9.33. Size:36K st
stp80nf55-07.pdf pdf_icon

STP80NF55-07 N - CHANNEL 55V - 0.0055 - 80A - TO-220STripFET POWER MOSFETTARGET DATATYPE VDSS RDS(on) IDSTP80NF55-07 55 V

9.34. Size:206K inchange semiconductor
stp80nf55-06.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP80NF55-06FEATURESTypical R (on)=0.005DSExcellent switching performanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenoid and relay driversDC-DC convertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T

9.35. Size:261K inchange semiconductor
stp80nf12.pdf pdf_icon

isc N-Channel MOSFET Transistor STP80NF12FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

9.36. Size:282K inchange semiconductor
stp80pf55.pdf pdf_icon

isc P-Channel MOSFET Transistor STP80PF55FEATURESDrain Current : I = -80A@ T =25D CDrain Source Voltage: V = -55V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max) @ V = -10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol

9.37. Size:206K inchange semiconductor
stp80n10f7.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP80N10F7FEATURESExtremely low gate chargeUltra low on-resistanceLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .